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| BUL42D High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUL42D is a state-of-the-art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable for light ballast applications. Main Features: http://onsemi.com 4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR * * * * Free Wheeling Diode Built In Flat DC Current Gain Fast Switching Times and Tight Distribution "Six Sigma" Process Providing Tight and Reproducible Parameter Spreads MAXIMUM RATINGS Rating Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Collector Current - Continuous - Peak (Note 1) Base Current - Continuous - Peak (Note 1) *Total Device Dissipation @ TC = 25_C *Derate above 25_C Operating and Storage Temperature Symbol VCEO VCBO VCES VEBO IC ICM IB IBM PD TJ, Tstg Value 400 700 700 9 4.0 8.0 1.0 2.0 75 0.6 -65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watt W/_C _C TO-220 CASE 221A STYLE 1 BUL 42D YWW MARKING DIAGRAM Y WW = Year = Work Week TYPICAL GAIN Typical Gain @ IC = 1 A, VCE = 2 V Typical Gain @ IC = 0.3 A, VCE = 1 V hFE hFE 13 16 - - ORDERING INFORMATION Device BUL42D Package TO-220 Shipping 50 Units/Rail THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction-to-Case Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 seconds Symbol RJC RJA TL Value 1.66 62.5 260 Unit C/W C/W C 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10% (c) Semiconductor Components Industries, LLC, 2002 1 April, 2002 - Rev. 1 Publication Order Number: BUL42D/D IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I II I I I II I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I II I IIIIIIIIIIIIIIIIIII I I I II I I I II I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I III I I I I I I II I I I II I II II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I II I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I I II I I I II I I II I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I II I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) DYNAMIC SATURATION VOLTAGE SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 ms) DIODE CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Dynamic Saturation Voltage: Determined 1 ms and 3 ms respectively after rising IB1 reaches 90% of final IB1 Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Fall Time (IC = 2.5 Adc, IB1 = IB2 = 0.5 A, VCC = 150 V, VBE = -2 V) Turn-Off Time (IC = 1.2 Adc, IB1 = 0.4 A, IB2 = 0.1 A, VCC = 300 V) Forward Diode Voltage (IEC = 1.0 Adc) DC Current Gain (IC = 1 Adc, VCE = 2 Vdc) (IC = 2 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 2 Adc, IB = 0.5 Adc) Base-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) Emitter-Cutoff Current (VEB = 9 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Emitter-Base Breakdown Voltage (IEBO = 1 mA) Collector-Base Breakdown Voltage (ICBO = 1 mA) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Characteristic IC = 1 A IB1 = 200 mA VCC = 300 V IC = 400 mA IB1 = 40 mA VCC = 300 V @ 3 ms @ 1 ms @ 3 ms @ 1 ms @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C http://onsemi.com BUL42D 2 VCEO(sus) VCE(dsat) Symbol VCE(sat) VBE(sat) VCBO VEBO ICEO IEBO ICES VEC hFE Toff Tf Min 700 400 4.6 8.0 10 9.0 - - - - - - - - - - - - - - - - - 0.85 0.35 0.6 0.75 1.3 Typ 780 430 0.9 0.2 2.1 4.7 2.8 3.2 13 12 12 - - - - - - - 6.55 Max 10 200 100 100 200 0.8 1.5 1.0 1.2 - - - - - - - - - - - - - mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc Vdc ms ms V V - BUL42D TYPICAL STATIC CHARACTERISTICS 100 100 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125C TJ = 25C 10 TJ = -20C TJ = 125C TJ = 25C 10 TJ = -20C 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 1. DC Current Gain @ VCE = 1 V Figure 2. DC Current Gain @ VCE = 5 V 3 TJ = 25C VCE , VOLTAGE (VOLTS) 2A 1.5 A 1 IC = 0.2 A 0 0.001 0.01 1A 0.4 A VCE , VOLTAGE (VOLTS) 10 IC/IB = 5 2 1 0.1 TJ = 125C TJ = -20C TJ = 25C 1 0.1 IB, BASE CURRENT (AMPS) 10 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 3. Collector Saturation Region Figure 4. Collector-Emitter Saturation Voltage 100 IC/IB = 8 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 10 TJ = 125C 1 TJ = -20C TJ = 25C 10 IC/IB = 10 TJ = -20C TJ = 125C TJ = 25C 1 0.1 0.1 0.01 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 5. Collector-Emitter Saturation Voltage Figure 6. Collector-Emitter Saturation Voltage http://onsemi.com 3 BUL42D TYPICAL STATIC CHARACTERISTICS 10 IC/IB = 5 VBE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) 10 IC/IB = 8 1 TJ = -20C 1 TJ = -20C TJ = 125C TJ = 25C TJ = 125C TJ = 25C 0.1 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 7. Base-Emitter Saturation Region Figure 8. Base-Emitter Saturation Region 10 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 10 VBE , VOLTAGE (VOLTS) 10 1 TJ = -20C 1 VEC(V) = -20C VEC(V) = 125C VEC(V) = 25C TJ = 125C TJ = 25C 0.1 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.01 0.1 1 REVERSE EMITTER-COLLECTOR CURRENT 10 Figure 9. Base-Emitter Saturation Region Figure 10. Forward Diode Voltage http://onsemi.com 4 BUL42D TYPICAL SWITCHING CHARACTERISTICS 1000 Cib C, CAPACITANCE (pF) 100 Cob 10 TJ = 25C f(test) = 1 MHz BVCER (VOLTS) 900 800 700 600 500 400 1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 300 TC = 25C 10 100 RBE (W) 1000 10000 ICER = 100 mA lC = 25 mH ICER = 10 mA Figure 11. Capacitance Figure 12. BVCER = f(RBE) 800 700 600 t, TIME (ns) 500 400 300 200 100 0 0 TJ = 125C TJ = 25C 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 2 hFE = 5 hFE = 10 IBon = IBoff VCC = 300 V PW = 40 s t, TIME (ns) 9 IBon = IBoff VCC = 300 V PW = 40 s 6 3 TJ = 125C TJ = 25C 0 hFE = 5 0 hFE = 10 2 1.5 0.5 1 IC, COLLECTOR CURRENT (AMPS) Figure 13. Resistive Switching, ton Figure 14. Resistive Switching, toff 4 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 H TJ = 125C 4 3 t, TIME ( s) TJ = 125C 3 TJ = 25C t, TIME ( s) TJ = 25C 2 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 H 2 1 0 0 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 1 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 2 Figure 15. Inductive Storage Time, tsi @ hFE = 5 http://onsemi.com 5 Figure 16. Inductive Storage Time, tsi @ hFE = 10 BUL42D TYPICAL SWITCHING CHARACTERISTICS 400 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 250 TJ = 125C TJ = 25C t, TIME (ns) 200 TJ = 125C 300 t, TIME (ns) tc 200 TJ = 25C 150 IBon = IBoff VCE = 15 V VZ = 300 V LC = 200 H 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 2 tfi 100 0 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 100 Figure 17. Inductive Fall and Cross Over Time, tfi and tc @ hFE = 5 500 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H TJ = 125C 4 t, TIME ( m s) 5 Figure 18. Inductive Fall Time, tfi @ hFE = 10 400 t, TIME (ns) IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H IC = 1 A TJ = 125C TJ = 25C 3 300 TJ = 25C 2 IC = 0.3 A 200 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 1 3 4 5 6 7 8 9 hFE, FORCED GAIN 10 11 12 Figure 19. Inductive Cross Over Time, tc @ hFE = 10 Figure 20. Inductive Storage Time, tsi 300 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 200 300 CROSS-OVER TIME (ns) t fi , FALL TIME (ns) IC = 0.3 A IC = 1 A 200 IC = 0.3 A IC = 1 A 100 TJ = 125C TJ = 25C 3 4 5 6 7 hFE, FORCED GAIN 8 9 10 100 TJ = 125C TJ = 25C 2 4 6 hFE, FORCED GAIN 8 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 10 Figure 21. Inductive Fall Time, tf Figure 22. Inductive Cross Over Time, tc http://onsemi.com 6 BUL42D TYPICAL SWITCHING CHARACTERISTICS 3 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H IB 1 & 2 = 200 mA t fr , FORWARD RECOVERY TIME (ns) 440 420 400 380 360 340 320 300 0 1.5 1 0.5 IF, FORWARD CURRENT (AMPS) 2 di/dt = 10 A/ms, TC = 25C 2.5 t, TIME ( m s) 500 mA 2 50 mA 100 mA 1.5 1 0 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 Figure 23. Inductive Storage Time, tsi Figure 24. Forward Recovery Time, tfr 10 VCE Dyn 1 ms Dyn 3 ms 0V 90% IB IB 1 ms 3 ms 2 0 TIME 8 6 Vclamp 4 IB 90% IB1 IC tsi 10% Vclamp tc 90% IC tfi 10% IC 0 2 4 TIME 6 8 Figure 25. Dynamic Saturation Voltage Measurements Figure 26. Inductive Switching Measurements http://onsemi.com 7 BUL42D TYPICAL SWITCHING CHARACTERISTICS Table 1. Inductive Load Switching Drive Circuit +15 V 1 F 150 3W 100 3W MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 RB1 Iout A 50 COMMON 500 F 150 3W MJE210 MTP12N10 RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA VCE IB1 IB IB2 Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 IC PEAK MPF930 +10 V 1 F -Voff VFRM VF VFR (1.1 VF) UNLESS OTHERWISE SPECIFIED 0.1 VF tfr IF 10% IF Figure 27. tfr Measurement http://onsemi.com 8 BUL42D 10 IC , COLLECTOR CURRENT (AMPS) 5 ms dc 1 EXTENDED SOA 1 ms 10 ms MAXIMUM RATINGS 5 1 ms IC , COLLECTOR CURRENT (AMPS) 4 3 2 1 0 VBE = 0 V 300 400 VBE(off) = -1.5 V 500 600 700 VBE(off) = -5 V TJ = 125C GAIN 4 LC = 500 mH 0.1 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 28. Forward Bias Safe Operating Area 1 POWER DERATING FACTOR 0.8 0.6 0.4 0.2 Figure 29. Reverse Bias Safe Operating Area SECOND BREAKDOWN DERATING THERMAL DERATING 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (C) Figure 30. Power Derating http://onsemi.com 9 BUL42D There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on TC = 25C; Tj(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second Breakdown limitations do not derate like thermal limitations. Allowable current at the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. Tj(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as reverse biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 1 D = 0.5 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 t1 P(pk) RJC(t) = r(t) RJC RJC = 1.66C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100 1000 t2 DUTY CYCLE, D = t1/t2 0.1 1 t, TIME (ms) 10 0.01 Figure 31. Thermal Response http://onsemi.com 10 BUL42D PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 F T S C Q 123 A U K H Z L V G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR R J http://onsemi.com 11 BUL42D ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 BUL42D/D |
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